Oxygen Effect in Annealing Process of Aluminium Doped Zinc Oxide Films

Authors

  • Budi Astuti Physics Departement, Faculty of Mathematics and Natural Science, Universitas Negeri Semarang
  • Sugianto . Physics Departement, Faculty of Mathematics and Natural Science, Universitas Negeri Semarang
  • Siti Nor Mahmudah Physics Departement, Faculty of Mathematics and Natural Science, Universitas Negeri Semarang
  • Putut Marwoto Physics Departement, Faculty of Mathematics and Natural Science, Universitas Negeri Semarang
  • Didik Ariyanto Research Center for Physics, Indonesian Institute of Sciences
  • Edy Wibowo Engineering hysics, School of Electrical Engineering, Telkom University

DOI:

https://doi.org/10.37134/ejsmt.vol5.2.4.2018

Keywords:

Aluminium doped zinc oxide, Annealing, Oxygen, Structural properties, optical properties

Abstract

Al doped ZnO (ZnO:Al) thin films was grown on corning glass substrate using dc magnetron sputtering. ZnO:Al thin film grown with plasma power 40 watt and 500 mTorr argon pressure  for 120 minutes. Film was grown annealed on oxygen atmosphere with different pressure for 20 minutes. The crystalline of ZnO:Al film deposited has an hexagonal structure. The crystallites preferred orientation shift gradually from (002) to (101) direction as the pressure of oxygen increases. Transmittance in the visible regions increases with increasing pressure of oxygen about 81,27%. The optical characterization indicated that the band gap shift toward lower energies with increasing pressure of oxygen.

 

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Published

2018-12-04

How to Cite

Astuti, B., ., S., Mahmudah, S. N., Marwoto, P., Ariyanto, D., & Wibowo, E. (2018). Oxygen Effect in Annealing Process of Aluminium Doped Zinc Oxide Films. EDUCATUM Journal of Science, Mathematics and Technology, 5(2), 33–39. https://doi.org/10.37134/ejsmt.vol5.2.4.2018