Electrical Current Noise in Langmuir-Blodgett Thin Films

Abstract

The electrical current noise of a metal-insulator-semiconductor (MIS) diode-like device fabricated by Langmuir-Blodgett (LB) technique has been studied at low to moderate dc bias current at room temperature. The result shows that the current noise spectral density SI(f) is 1/f like and the noise power was highly dependent on the bias current. The 1/f noise was not observed at zero bias. It is believed that at low bias current, the origin of noise was due to the bulk phenomena - silicon substrate and contacts whilst at higher bias current, the origin of noise in the device was solely from the LB films – surface influence.